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| Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1890 Unit: mm s Features q q q 4.50.1 1.60.2 1.50.1 1.0-0.2 +0.1 Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.60.1 0.4max. 45 0.40.08 0.50.08 1.50.1 3.00.15 4.0-0.20 0.40.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25C) Ratings 80 80 5 1.5 1 1 150 -55 ~ +150 1cm2 Unit V V V A A W C C 1:Base 2:Collector 3:Emitter 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg marking EIAJ:SC-62 Mini Power Type Package Marking symbol : 2A Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob *1 Conditions VCB = 40V, IE = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 2V, IC = 100mA VCE = 2V, IC = 500mA*2 IC = 500mA, IB = 50mA*2 IC = 500mA, IB = 50mA*2 VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ max 0.1 80 80 5 120 60 0.15 0.85 120 10 *2 2.50.1 +0.25 Unit A V V V 340 0.3 1.2 V V MHz 20 pF Pulse measurement *1h FE Rank classification R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC -- Ta 1.4 2SC5026 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 1.2 10 3 1 0.3 0.1 -25C 0.03 0.01 0.003 0.001 0.01 0.03 Ta=75C 25C VCE(sat) -- IC IC/IB=10 Collector power dissipation PC (W) 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.0 1.0 Collector current IC (A) 0.8 IB=8mA 0.8 0.6 7mA 6mA 5mA 4mA 3mA 0.6 0.4 2mA 0.4 0.2 0.2 1mA 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 hFE -- IC IC/IB=10 300 VCE=2V 200 fT -- I E VCB=10V Ta=25C Base to emitter saturation voltage VBE(sat) (V) 250 Transition frequency fT (MHz) 0.3 1 3 10 30 10 3 25C 1 75C 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C Forward current transfer ratio hFE 160 200 Ta=75C 25C 120 150 -25C 100 80 50 40 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0 -1 -3 -10 -30 -100 -300 -1000 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob -- VCB 60 Collector output capacitance Cob (pF) 50 40 30 20 10 0 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) 2 |
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